XRS30P10 MOSFET Datasheet & Specifications

P-Channel TO-252-3L Logic-Level XNRUSEMI
Vds Max
100V
Id Max
30A
Rds(on)
55mΩ@10V
Vgs(th)
2.5V

Quick Reference

The XRS30P10 is an P-Channel MOSFET in a TO-252-3L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 30A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackageTO-252-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)83WMax thermal limit
On-Resistance (Rds(on))55mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)38nCSwitching energy
Input Capacitance (Ciss)2.1nFInternal gate capacitance
Output Capacitance (Coss)168pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TPNCE01P30K P-Channel TO-252-3L 100V 30A 53mΩ@10V 3V
TECH PUBLIC 📄 PDF
SUD50P10-43L-TP P-Channel TO-252-3L 100V 30A 53mΩ@10V 3V
TECH PUBLIC 📄 PDF
TPM30P10K3 P-Channel TO-252-3L 100V 30A 65mΩ@4.5V 3V
TECH PUBLIC 📄 PDF