TPM30P10K3 MOSFET Datasheet & Specifications
P-Channel
TO-252-3L
Logic-Level
TECH PUBLIC
Vds Max
100V
Id Max
30A
Rds(on)
65mΩ@4.5V
Vgs(th)
3V
Quick Reference
The TPM30P10K3 is an P-Channel MOSFET in a TO-252-3L package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | TO-252-3L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 102W | Max thermal limit |
| On-Resistance (Rds(on)) | 65mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 90nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 222pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TPNCE01P30K | P-Channel | TO-252-3L | 100V | 30A | 53mΩ@10V | 3V | TECH PUBLIC 📄 PDF |
| SUD50P10-43L-TP | P-Channel | TO-252-3L | 100V | 30A | 53mΩ@10V | 3V | TECH PUBLIC 📄 PDF |
| XRS30P10 | P-Channel | TO-252-3L | 100V | 30A | 55mΩ@10V | 2.5V | XNRUSEMI 📄 PDF |