WSF6012 MOSFET Datasheet & Specifications
P-Channel
TO-252-4
Logic-Level
Winsok Semicon
Vds Max
60V
Id Max
20A;15A
Rds(on)
28mΩ@10V;46mΩ@10V
Vgs(th)
2.5V
Quick Reference
The WSF6012 is an P-Channel MOSFET in a TO-252-4 package, manufactured by Winsok Semicon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A;15A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Winsok Semicon | Original Manufacturer |
| Package | TO-252-4 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A;15A | Max current handling |
| Power Dissipation (Pd) | 34.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 28mΩ@10V;46mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 12.6nC@4.5V;10nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 670pF;500pF | Internal gate capacitance |
| Output Capacitance (Coss) | 70pF;66pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |