STC6301D MOSFET Datasheet & Specifications
P-Channel
TO-252-4
Logic-Level
STANSON Tech.
Vds Max
60V
Id Max
23A;18A
Rds(on)
45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V
Vgs(th)
1V
Quick Reference
The STC6301D is an P-Channel MOSFET in a TO-252-4 package, manufactured by STANSON Tech.. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 23A;18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | STANSON Tech. | Original Manufacturer |
| Package | TO-252-4 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 23A;18A | Max current handling |
| Power Dissipation (Pd) | 34.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 12.6nC@4.5V;9.9nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |