WPM3407-3/TR MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level WILLSEMI
Vds Max
30V
Id Max
4.4A
Rds(on)
66mΩ@4.5V
Vgs(th)
3V

Quick Reference

The WPM3407-3/TR is an P-Channel MOSFET in a SOT-23 package, manufactured by WILLSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 4.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerWILLSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)4.4AMax current handling
Power Dissipation (Pd)1.4WMax thermal limit
On-Resistance (Rds(on))66mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)23nC@10VSwitching energy
Input Capacitance (Ciss)1.2nFInternal gate capacitance
Output Capacitance (Coss)150pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2393DS-T1-GE3 P-Channel SOT-23 30V 7.5A 22.7mΩ@10V 1V
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AO3415M-6AF P-Channel SOT-23 30V 5A 30mΩ@4.5V 620mV
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HL3401 P-Channel SOT-23 30V 4.4A 45.5mΩ@10V 900mV
AO3401 P-Channel SOT-23 30V 4.4A 52mΩ@4.5V 900mV
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SI2347DS-T1-GE3 P-Channel SOT-23 30V 5A 68mΩ@4.5V 2.5V
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NCE3401AY P-Channel SOT-23 30V 4.4A 80mΩ@2.5V 1.3V
TM05P04I P-Channel SOT-23 40V 5A 47mΩ@10V 1.7V
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SI2319CDS-T1-GE3 P-Channel SOT-23 40V 4.4A 108mΩ@4.5V 2.5V
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SQ2319ADS-T1_GE3 P-Channel SOT-23 40V 4.6A 145mΩ@4.5V 2.5V
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BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
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