SI2347DS-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
SOT-23
Logic-Level
VISHAY
Vds Max
30V
Id Max
5A
Rds(on)
68mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SI2347DS-T1-GE3 is an P-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5A | Max current handling |
| Power Dissipation (Pd) | 1.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 68mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 22nC@10V | Switching energy |
| Input Capacitance (Ciss) | 705pF | Internal gate capacitance |
| Output Capacitance (Coss) | 93pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI2393DS-T1-GE3 | P-Channel | SOT-23 | 30V | 7.5A | 22.7mΩ@10V | 1V | VISHAY 📄 PDF |
| AO3415M-6AF | P-Channel | SOT-23 | 30V | 5A | 30mΩ@4.5V | 620mV | FOSAN 📄 PDF |
| TM05P04I | P-Channel | SOT-23 | 40V | 5A | 47mΩ@10V | 1.7V | Tritech-MOS 📄 PDF |
| BRCS5P06MA | P-Channel | SOT-23 | 60V | 5A | 103mΩ@4.5V | 1.5V | BLUE ROCKET 📄 PDF |