WNM6006-8/TR MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
High-Current
WILLSEMI
Vds Max
60V
Id Max
100A
Rds(on)
3.4mΩ@10V
Vgs(th)
4V
Quick Reference
The WNM6006-8/TR is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by WILLSEMI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | WILLSEMI | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 25W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.4mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 42nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.91nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.72nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FH3406GS | N-Channel | PDFN5x6-8L | 60V | 140A | 2.1mΩ@10V | 1V | XIN FEI HONG 📄 PDF |
| FH4008GS | N-Channel | PDFN5x6-8L | 85V | 110A | 2.8mΩ | 2V | XIN FEI HONG 📄 PDF |
| S100N85F | N-Channel | PDFN5x6-8L | 85V | 100A | 5.6mΩ@10V | 4V | HL 📄 PDF |
| S130N10LF | N-Channel | PDFN5x6-8L | 100V | 130A | 4.5mΩ@10V | 2.5V | HL 📄 PDF |