S100N85F MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
High-Current
HL
Vds Max
85V
Id Max
100A
Rds(on)
5.6mΩ@10V
Vgs(th)
4V
Quick Reference
The S100N85F is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by HL. It supports a drain-source breakdown voltage of 85V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HL | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 85V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 107.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 61.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.645nF | Internal gate capacitance |
| Output Capacitance (Coss) | 673pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |