VBQA1102N MOSFET Datasheet & Specifications
N-Channel
DFN5x6-8
Logic-Level
VBsemi Elec
Vds Max
100V
Id Max
30A
Rds(on)
17mΩ@10V
Vgs(th)
3V
Quick Reference
The VBQA1102N is an N-Channel MOSFET in a DFN5x6-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | DFN5x6-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 60W | Max thermal limit |
| On-Resistance (Rds(on)) | 17mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 20nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.47nF | Internal gate capacitance |
| Output Capacitance (Coss) | 132pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DON80N10-L | N-Channel | DFN5x6-8 | 100V | 80A | 7mΩ@10V | 2.6V | DOINGTER 📄 PDF |
| WSD60N10GDN56 | N-Channel | DFN5x6-8 | 100V | 60A | 8.5mΩ@10V | 1V | Winsok Semicon 📄 PDF |
| WSD45N10GDN56 | N-Channel | DFN5x6-8 | 100V | 45A | 17.5mΩ@10V | 3V | Winsok Semicon 📄 PDF |
| DON30N10T | N-Channel | DFN5x6-8 | 100V | 30A | 20mΩ@10V | 2.5V | DOINGTER 📄 PDF |
| DON110N12T | N-Channel | DFN5x6-8 | 120V | 110A | 8mΩ@4.5V | 2.5V | DOINGTER 📄 PDF |