WSD45N10GDN56 MOSFET Datasheet & Specifications

N-Channel DFN5x6-8 Logic-Level Winsok Semicon
Vds Max
100V
Id Max
45A
Rds(on)
17.5mΩ@10V
Vgs(th)
3V

Quick Reference

The WSD45N10GDN56 is an N-Channel MOSFET in a DFN5x6-8 package, manufactured by Winsok Semicon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 45A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerWinsok SemiconOriginal Manufacturer
PackageDFN5x6-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)45AMax current handling
Power Dissipation (Pd)95WMax thermal limit
On-Resistance (Rds(on))17.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)59nC@10VSwitching energy
Input Capacitance (Ciss)1.8nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DON80N10-L N-Channel DFN5x6-8 100V 80A 7mΩ@10V 2.6V
DOINGTER 📄 PDF
WSD60N10GDN56 N-Channel DFN5x6-8 100V 60A 8.5mΩ@10V 1V
Winsok Semicon 📄 PDF
DON110N12T N-Channel DFN5x6-8 120V 110A 8mΩ@4.5V 2.5V
DOINGTER 📄 PDF