TPS1120DR MOSFET Array Datasheet & Equivalents
P-Channel Array
SOIC-8
Logic-Level
TI
Vds Max
15V
Id Max
1.17A
Rds(on)
180mΩ@10V
Vgs(th)
1.5V
Quick Reference
The TPS1120DR is a P-Channel Array in a SOIC-8 package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 15V and a continuous drain current of 1.17A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 15V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.17A | Max current handling |
| Power Dissipation (Pd) | 840mW | Max thermal limit |
| On-Resistance (Rds(on)) | 180mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 5.45nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI4963DY | P-Channel Array | SOIC-8 | 20V | 6.2A | 50mΩ@2.5V | 1.5V | onsemi 📄 PDF |
| NTMD6P02R2G | P-Channel Array | SOIC-8 | 20V | 7.8A | 50mΩ@2.5V | 1.2V | onsemi 📄 PDF |
| SI9934DY | P-Channel Array | SOIC-8 | 20V | 5A | 74mΩ@2.5V | 1.5V | onsemi 📄 PDF |
| SI4953DY | P-Channel Array | SOIC-8 | 30V | 4.9A | 95mΩ@4.5V | 1V | onsemi 📄 PDF |
| ZXMP6A16DN8QTA | P-Channel Array | SOIC-8 | 60V | 3.9A | 125mΩ@4.5V | 1V | DIODES 📄 PDF |