NTMD6P02R2G MOSFET Array Datasheet & Equivalents
P-Channel Array
SOIC-8
Logic-Level
onsemi
Vds Max
20V
Id Max
7.8A
Rds(on)
50mΩ@2.5V
Vgs(th)
1.2V
Quick Reference
The NTMD6P02R2G is a P-Channel Array in a SOIC-8 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 7.8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.8A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 50mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 35nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.7nF | Internal gate capacitance |
| Output Capacitance (Coss) | 775pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||