TPH1R403NL-JSM MOSFET Datasheet & Specifications

N-Channel DFN5x6-8L Logic-Level JSMSEMI
Vds Max
30V
Id Max
150A
Rds(on)
2.5mΩ@10V
Vgs(th)
2.5V

Quick Reference

The TPH1R403NL-JSM is an N-Channel MOSFET in a DFN5x6-8L package, manufactured by JSMSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)100WMax thermal limit
On-Resistance (Rds(on))2.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)45nC@10VSwitching energy
Input Capacitance (Ciss)7.4nFInternal gate capacitance
Output Capacitance (Coss)3.586nFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AON6312-MS N-Channel DFN5x6-8L 30V 150A 3.2mΩ@4.5V 2.5V
MSKSEMI 📄 PDF