AON6312-MS MOSFET Datasheet & Specifications

N-Channel DFN5x6-8L Logic-Level MSKSEMI
Vds Max
30V
Id Max
150A
Rds(on)
3.2mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The AON6312-MS is an N-Channel MOSFET in a DFN5x6-8L package, manufactured by MSKSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)187WMax thermal limit
On-Resistance (Rds(on))3.2mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)56.9nC@10VSwitching energy
Input Capacitance (Ciss)4.345nFInternal gate capacitance
Output Capacitance (Coss)340pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TPH1R403NL-JSM N-Channel DFN5x6-8L 30V 150A 2.5mΩ@10V 2.5V
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