TK39N60W,S1VF(S MOSFET Datasheet & Specifications

N-Channel TO-247-3 High-Voltage TOSHIBA
Vds Max
600V
Id Max
38.8A
Rds(on)
65mΩ@10V
Vgs(th)
3.7V

Quick Reference

The TK39N60W,S1VF(S is an N-Channel MOSFET in a TO-247-3 package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 38.8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)38.8AMax current handling
Power Dissipation (Pd)270WMax thermal limit
On-Resistance (Rds(on))65mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.7VVoltage required to turn on
Gate Charge (Qg)110nC@10VSwitching energy
Input Capacitance (Ciss)4.1nFInternal gate capacitance
Output Capacitance (Coss)90pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mΩ@20V 2.5V
Tokmas 📄 PDF
GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mΩ@15V 2.5V
SUPSiC 📄 PDF
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mΩ@15V 2.7V
SUPSiC 📄 PDF
GC2M0040120D N-Channel TO-247-3 1.2kV 55A 80mΩ@20V 3.2V
SUPSiC 📄 PDF
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V
Tokmas 📄 PDF