TK11A65W,S5X(M MOSFET Datasheet & Specifications
N-Channel
TO-220
High-Voltage
TOSHIBA
Vds Max
650V
Id Max
11.1A
Rds(on)
390mΩ@10V
Vgs(th)
3.5V
Quick Reference
The TK11A65W,S5X(M is an N-Channel MOSFET in a TO-220 package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 11.1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 11.1A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 390mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 25nC@10V | Switching energy |
| Input Capacitance (Ciss) | 890pF | Internal gate capacitance |
| Output Capacitance (Coss) | 23pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CRJT99N65G2 | N-Channel | TO-220 | 650V | 35A | 81mΩ@10V | 4V | CRMICRO 📄 PDF |
| NCE65N180 | N-Channel | TO-220 | 650V | 20A | 160mΩ@10V | 3.5V | NCE 📄 PDF |
| TK14E65W | N-Channel | TO-220 | 650V | 13.7A | 220mΩ@10V | 2.5V | TOSHIBA 📄 PDF |
| S1X(S | N-Channel | TO-220 | 650V | 12A | 640mΩ@10V | 4V | TDSEMIC 📄 PDF |