12N65-TD MOSFET Datasheet & Specifications
N-Channel
TO-220
High-Voltage
TDSEMIC
Vds Max
650V
Id Max
12A
Rds(on)
640mΩ@10V
Vgs(th)
4V
Quick Reference
The 12N65-TD is an N-Channel MOSFET in a TO-220 package, manufactured by TDSEMIC. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 12A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TDSEMIC | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 640mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 41.9nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 164pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |