SVT078R0ND(UMW) MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level UMW
Vds Max
68V
Id Max
88A
Rds(on)
6.3mΩ@10V
Vgs(th)
3V

Quick Reference

The SVT078R0ND(UMW) is an N-Channel MOSFET in a TO-252 package, manufactured by UMW. It supports a drain-source breakdown voltage of 68V and a continuous drain current of 88A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)68VMax breakdown voltage
Continuous Drain Current (Id)88AMax current handling
Power Dissipation (Pd)167WMax thermal limit
On-Resistance (Rds(on))6.3mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)86nC@10VSwitching energy
Input Capacitance (Ciss)4.1nFInternal gate capacitance
Output Capacitance (Coss)323pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
PTD90N08 N-Channel TO-252 80V 90A 7.2mΩ@10V 3V
HT(Shenzhen J... 📄 PDF
NSH045N100S N-Channel TO-252 100V 120A 4.5mΩ@10V 3V
YFW120N10AD N-Channel TO-252 100V 120A 4.6mΩ@10V 3V
SP010N04BGTH N-Channel TO-252 100V 120A 5mΩ@10V
6.5mΩ@4.5V
1.7V
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IPD068N10N3G(UMW) N-Channel TO-252 100V 90A 5.7mΩ@10V 2.7V
OSD100N10G N-Channel TO-252 100V 100A 8mΩ@10V 2.5V
CMD060N12 N-Channel TO-252 120V 100A 5.6mΩ@10V 3V