STS8DN6LF6AG MOSFET Array Datasheet & Equivalents
N-Channel Array
SOIC-8
Logic-Level
ST
Vds Max
60V
Id Max
8A
Rds(on)
26mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The STS8DN6LF6AG is a N-Channel Array in a SOIC-8 package, manufactured by ST. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8A | Max current handling |
| Power Dissipation (Pd) | 3.2W | Max thermal limit |
| On-Resistance (Rds(on)) | 26mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 27nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.34nF | Internal gate capacitance |
| Output Capacitance (Coss) | 90pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CSD88539ND | N-Channel Array | SOIC-8 | 60V | 15A | 27mΩ@6V | 3V | TI 📄 PDF |