CSD88539ND MOSFET Array Datasheet & Equivalents
N-Channel Array
SOIC-8
Logic-Level
TI
Vds Max
60V
Id Max
15A
Rds(on)
27mΩ@6V
Vgs(th)
3V
Quick Reference
The CSD88539ND is a N-Channel Array in a SOIC-8 package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 15A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 15A | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 27mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 7.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 741pF | Internal gate capacitance |
| Output Capacitance (Coss) | 91pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||