STP100N10F7 MOSFET Datasheet & Specifications

N-Channel TO-220 High-Current ST
Vds Max
100V
Id Max
80A
Rds(on)
8mΩ@10V
Vgs(th)
4.5V

Quick Reference

The STP100N10F7 is an N-Channel MOSFET in a TO-220 package, manufactured by ST. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 80A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)80AMax current handling
Power Dissipation (Pd)150WMax thermal limit
On-Resistance (Rds(on))8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)61nC@10VSwitching energy
Input Capacitance (Ciss)4.369nFInternal gate capacitance
Output Capacitance (Coss)823pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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