STB7NK80ZT4 MOSFET Datasheet & Specifications
N-Channel
D2PAK
High-Voltage
ST
Vds Max
800V
Id Max
5.2A
Rds(on)
1.8ฮฉ@10V
Vgs(th)
4.5V
Quick Reference
The STB7NK80ZT4 is an N-Channel MOSFET in a D2PAK package, manufactured by ST. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 5.2A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | D2PAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 800V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.2A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.8ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 56nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.138nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| STB6NK90ZT4 | N-Channel | D2PAK | 900V | 5.8A | 2ฮฉ@10V | 4.5V | ST ๐ PDF |
| STB10N95K5 | N-Channel | D2PAK | 950V | 8A | 800mฮฉ@10V | 5V | ST ๐ PDF |