STB6NK90ZT4 MOSFET Datasheet & Specifications
N-Channel
D2PAK
High-Voltage
ST
Vds Max
900V
Id Max
5.8A
Rds(on)
2Ī©@10V
Vgs(th)
4.5V
Quick Reference
The STB6NK90ZT4 is an N-Channel MOSFET in a D2PAK package, manufactured by ST. It supports a drain-source breakdown voltage of 900V and a continuous drain current of 5.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | D2PAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 900V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.8A | Max current handling |
| Power Dissipation (Pd) | 140W | Max thermal limit |
| On-Resistance (Rds(on)) | 2Ī©@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 60.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.35nF | Internal gate capacitance |
| Output Capacitance (Coss) | 130pF | Internal output capacitance |
| Operating Temp | -55ā~+150ā | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| STB10N95K5 | N-Channel | D2PAK | 950V | 8A | 800mĪ©@10V | 5V | ST š PDF |