SSM6N16FE,L3F MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-563(SOT-666) Logic-Level TOSHIBA
Vds Max
20V
Id Max
100mA
Rds(on)
15ฮฉ@1.5V
Vgs(th)
1.1V

Quick Reference

The SSM6N16FE,L3F is a N-Channel Array in a SOT-563(SOT-666) package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 100mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-563(SOT-666)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)100mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
On-Resistance (Rds(on))15ฮฉ@1.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.1VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SSM6N56FE N-Channel Array SOT-563(SOT-666) 20V 800mA 840mฮฉ@1.5V 1V
LM N-Channel Array SOT-563(SOT-666) 20V 250mA 9ฮฉ@1.2V 1V
SSM6N35AFE N-Channel Array SOT-563(SOT-666) 20V 180mA 20ฮฉ@1.2V 1V
LF N-Channel Array SOT-563(SOT-666) 30V 100mA 4ฮฉ@4V 1.5V
SSM6N35FE N-Channel Array SOT-563(SOT-666) 30V 100mA 6ฮฉ@2.5V 1.5V
LM N-Channel Array SOT-563(SOT-666) 30V 100mA 13ฮฉ@2.5V 1.5V
SSM6N44FE N-Channel Array SOT-563(SOT-666) 50V 200mA 1.6ฮฉ@4.5V 800mV