SSM6N35FE,LM MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-563(SOT-666)
Logic-Level
TOSHIBA
Vds Max
20V
Id Max
180mA
Rds(on)
20Ω@1.2V
Vgs(th)
1V
Quick Reference
The SSM6N35FE,LM is a N-Channel Array in a SOT-563(SOT-666) package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 180mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOT-563(SOT-666) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 180mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 20Ω@1.2V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |