SSM3K336R.LF MOSFET Datasheet & Specifications

N-Channel SOT-23-3 Logic-Level TOSHIBA
Vds Max
30V
Id Max
3A
Rds(on)
140mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The SSM3K336R.LF is an N-Channel MOSFET in a SOT-23-3 package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-23-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)3AMax current handling
Power Dissipation (Pd)8WMax thermal limit
On-Resistance (Rds(on))140mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)1.7nC@4.5VSwitching energy
Input Capacitance (Ciss)126pFInternal gate capacitance
Output Capacitance (Coss)26pFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AO3404-TWGMC N-Channel SOT-23-3 30V 6A 25mΩ@10V 1.6V
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AP3404S N-Channel SOT-23-3 30V 6.5A 34mΩ@4.5V 2.5V
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SK3400 N-Channel SOT-23-3 30V 5.8A 55mΩ@2.5V 1.5V
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DO5N06AA N-Channel SOT-23-3 60V 5A 35mΩ@10V 1.57V
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SQ2362CES-T1_GE3 N-Channel SOT-23-3 60V 4.3A 57mΩ@10V
62mΩ@4.5V
2V
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DO2310DA N-Channel SOT-23-3 60V 3.2A 100mΩ@10V 2.5V
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DO5N10BA N-Channel SOT-23-3 100V 5A 130mΩ@4.5V 2.5V
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