SQ2362CES-T1_GE3 MOSFET Datasheet & Specifications
N-Channel
SOT-23-3
Logic-Level
VISHAY
Vds Max
60V
Id Max
4.3A
Rds(on)
57mΩ@10V;62mΩ@4.5V
Vgs(th)
2V
Quick Reference
The SQ2362CES-T1_GE3 is an N-Channel MOSFET in a SOT-23-3 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 4.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.3A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| On-Resistance (Rds(on)) | 57mΩ@10V;62mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 8.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 462pF | Internal gate capacitance |
| Output Capacitance (Coss) | 48pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |