SS8050 Datasheet & Equivalents

NPN SOT-23 General Purpose FOSAN
VCEO
20V
Ic Max
1.5A
Pd Max
300mW
hFE Gain
400

Quick Reference

The SS8050 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by FOSAN. It supports a breakdown voltage of 20V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)20VMax breakdown voltage
Collector Current (Ic)1.5AMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)400Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT618 NPN SOT-23 20V 1.5A 200 625mW
DSS4320T-7 NPN SOT-23 20V 2A 220 600mW
PBSS4320T NPN SOT-23 20V 2A 220 540mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 20V 2A 200 540mW
NSS20201LT1G NPN SOT-23 20V 2.5A 300 350mW
FMMT618-JSM NPN SOT-23 20V 2.5A 300 350mW
FMMT618-TP NPN SOT-23 20V 2.5A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
HFMMT618TA NPN SOT-23 20V 2.5A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4320T-HXY NPN SOT-23 20V 2.5A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT618 NPN SOT-23 20V 2.5A 200 625mW
FMMT618QTA NPN SOT-23 20V 2.5A 200 625mW
FMMT618TA NPN SOT-23 20V 2.5A 200 625mW
ZXT11N20DFTA NPN SOT-23 20V 2.5A 200 350mW
FMMT618 NPN SOT-23 25V 1.5A 400 300mW
HT8050ARTZ NPN SOT-23 25V 1.5A 400 300mW
SS8050/Y1 NPN SOT-23 25V 1.5A 400 300mW
SS8050 Y1 NPN SOT-23 25V 1.5A 350 300mW
HXY MOSFET ๐Ÿ“„ PDF
MPS8050S-D-HXY NPN SOT-23 25V 1.5A 350 300mW
SS8050-HF NPN SOT-23 25V 1.5A 350 300mW
SS8050-MS NPN SOT-23 25V 1.5A 300 225mW