SQJB80EP-T1_BE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
VISHAY
Vds Max
80V
Id Max
30A
Rds(on)
24mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SQJB80EP-T1_BE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 80V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 48W | Max thermal limit |
| On-Resistance (Rds(on)) | 24mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 35nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.4nF | Internal gate capacitance |
| Output Capacitance (Coss) | 600pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| EPC2103 | N-Channel Array | - | 80V | 30A | 4mΩ | 1.3V | EPC 📄 PDF |
| ISG0616N10NM5HSCATMA1 | N-Channel Array | - | 100V | 139A | 3.4mΩ@10V 4.3mΩ@6V |
3V | Infineon 📄 PDF |
| SQJ974EP-T1_BE3 | N-Channel Array | - | 100V | 30A | 32.5mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| EPC2104 | N-Channel Array | - | 120V | 30A | 5mΩ | 1.3V | EPC 📄 PDF |
| FS50UMJ-3 | N-Channel Array | - | 150V | 50A | 30mΩ@10V | 2V | RENESAS 📄 PDF |