SQJ974EP-T1_BE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
VISHAY
Vds Max
100V
Id Max
30A
Rds(on)
32.5mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SQJ974EP-T1_BE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 16W | Max thermal limit |
| On-Resistance (Rds(on)) | 32.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 1.05nF | Internal gate capacitance |
| Output Capacitance (Coss) | 550pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |