SQ3585EV-T1_GE3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOP-6
Logic-Level
VISHAY
Vds Max
20V
Id Max
3.57A;2.5A
Rds(on)
77mΩ@4.5V;166mΩ@4.5V
Vgs(th)
1.5V
Quick Reference
The SQ3585EV-T1_GE3 is a Dual N/P-Channel in a TSOP-6 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 3.57A;2.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TSOP-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.57A;2.5A | Max current handling |
| Power Dissipation (Pd) | 560mW | Max thermal limit |
| On-Resistance (Rds(on)) | 77mΩ@4.5V;166mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 1.8nC@4.5V;2.4nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |