AO6604 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel TSOP-6 Logic-Level AOS
Vds Max
20V
Id Max
13A
Rds(on)
65mΩ@4.5V;75mΩ@4.5V
Vgs(th)
700mV;650mV

Quick Reference

The AO6604 is a Dual N/P-Channel in a TSOP-6 package, manufactured by AOS. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 13A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerAOSOriginal Manufacturer
PackageTSOP-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)13AMax current handling
Power Dissipation (Pd)-Max thermal limit
On-Resistance (Rds(on))65mΩ@4.5V;75mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))700mV;650mVVoltage required to turn on
Gate Charge (Qg)2.9nC@4.5V;8.5nC@4.5VSwitching energy
Input Capacitance (Ciss)260pF;560pFInternal gate capacitance
Output Capacitance (Coss)48pF;80pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.