SP020N08GHTD MOSFET Datasheet & Specifications
N-Channel
TO-263
High-Current
Siliup
Vds Max
200V
Id Max
120A
Rds(on)
8.5mΩ@10V
Vgs(th)
4V
Quick Reference
The SP020N08GHTD is an N-Channel MOSFET in a TO-263 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 280W | Max thermal limit |
| On-Resistance (Rds(on)) | 8.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 5.3nF | Internal gate capacitance |
| Output Capacitance (Coss) | 410pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |