HSH120N20 MOSFET Datasheet & Specifications
N-Channel
TO-263
High-Current
HUASHUO
Vds Max
200V
Id Max
120A
Rds(on)
11mΩ@10V
Vgs(th)
4.5V
Quick Reference
The HSH120N20 is an N-Channel MOSFET in a TO-263 package, manufactured by HUASHUO. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUASHUO | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 500W | Max thermal limit |
| On-Resistance (Rds(on)) | 11mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 46nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.52nF | Internal gate capacitance |
| Output Capacitance (Coss) | 467pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP020N08GHTD | N-Channel | TO-263 | 200V | 120A | 8.5mΩ@10V | 4V | Siliup 📄 PDF |