SP010N60GDNK MOSFET Datasheet & Specifications
N-Channel
PDFN-8L(5x6)
Logic-Level
Siliup
Vds Max
100V
Id Max
14A
Rds(on)
60mΩ@10V;70mΩ@4.5V
Vgs(th)
1.8V
Quick Reference
The SP010N60GDNK is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by Siliup. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 14A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | PDFN-8L(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 14A | Max current handling |
| Power Dissipation (Pd) | 47.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 60mΩ@10V;70mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 6.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 345pF | Internal gate capacitance |
| Output Capacitance (Coss) | 65pF | Internal output capacitance |
| Operating Temp | -50℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SKQ90N10AD | N-Channel | PDFN-8L(5x6) | 100V | 93A | 5mΩ@4.5V | 2V | Shikues 📄 PDF |
| PGN10N100 | N-Channel | PDFN-8L(5x6) | 100V | 65A | 7.8mΩ@10V | 2V | HT(Shenzhen J... 📄 PDF |
| XRS50N10LF | N-Channel | PDFN-8L(5x6) | 100V | 50A | 12mΩ@10V | 1.7V | XNRUSEMI 📄 PDF |
| XRS30V10F | N-Channel | PDFN-8L(5x6) | 100V | 30A | 15.5mΩ@10V | 1.5V | XNRUSEMI 📄 PDF |
| SP010N35NK | N-Channel | PDFN-8L(5x6) | 100V | 23A | 35mΩ@10V 40mΩ@4.5V |
1.5V | Siliup 📄 PDF |
| XRS80N12F | N-Channel | PDFN-8L(5x6) | 120V | 80A | 7.7mΩ@10V | 1.8V | XNRUSEMI 📄 PDF |