SKQ35P03AD MOSFET Datasheet & Specifications
P-Channel
PDFN5060-8L
Logic-Level
Shikues
Vds Max
30V
Id Max
35A
Rds(on)
32mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SKQ35P03AD is an P-Channel MOSFET in a PDFN5060-8L package, manufactured by Shikues. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 35A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shikues | Original Manufacturer |
| Package | PDFN5060-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 35A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 32mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 1.345nF | Internal gate capacitance |
| Output Capacitance (Coss) | 194pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| XR50G30F | P-Channel | PDFN5060-8L | 30V | 45A | 7.5mΩ@10V 8.7mΩ@10V |
1.6V | XNRUSEMI 📄 PDF |
| XR50P03F | P-Channel | PDFN5060-8L | 30V | 50A | 14mΩ@10V | 2.5V | XNRUSEMI 📄 PDF |
| YJG55P03B | P-Channel | PDFN5060-8L | 30V | 55A | 20mΩ@4.5V | 2.8V | YANGJIE 📄 PDF |
| XR60P04F | P-Channel | PDFN5060-8L | 40V | 60A | 8.2mΩ@10V | 2.5V | XNRUSEMI 📄 PDF |