XR50P03F MOSFET Datasheet & Specifications
P-Channel
PDFN5060-8L
Logic-Level
XNRUSEMI
Vds Max
30V
Id Max
50A
Rds(on)
14mΩ@10V
Vgs(th)
2.5V
Quick Reference
The XR50P03F is an P-Channel MOSFET in a PDFN5060-8L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | PDFN5060-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 41W | Max thermal limit |
| On-Resistance (Rds(on)) | 14mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 22nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.77nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |