SISF00DN-T1-GE3 MOSFET Array Datasheet & Equivalents

N-Channel Array - Logic-Level VISHAY
Vds Max
30V
Id Max
60A
Rds(on)
5mΩ@10V
Vgs(th)
2.1V

Quick Reference

The SISF00DN-T1-GE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 60A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)44.4WMax thermal limit
On-Resistance (Rds(on))5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.1VVoltage required to turn on
Gate Charge (Qg)53nC@10VSwitching energy
Input Capacitance (Ciss)2.7nFInternal gate capacitance
Output Capacitance (Coss)865pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SIZF906ADT-T1-GE3 N-Channel Array - 30V 60A 5.3mΩ@4.5V 2.2V
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SIZ200DT-T1-GE3 N-Channel Array - 30V 61A 5.8mΩ@10V 2.4V
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SIZF916DT-T1-GE3 N-Channel Array - 30V 60A 6.8mΩ@4.5V 2.4V
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SIZF300DT-T1-GE3 N-Channel Array - 30V 141A 7mΩ@4.5V 2.2V
VISHAY 📄 PDF
SIZF360DT-T1-GE3 N-Channel Array - 30V 143A 7.5mΩ@4.5V 2.2V
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SIZF640DT-T1-GE3 N-Channel Array - 40V 159A 2.4mΩ@4.5V 2.4V
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NVMJD2D7N04CLTWG N-Channel Array - 40V 121A 2.65mΩ@10V 2.2V
onsemi 📄 PDF
NVMJD4D7N04CLTWG N-Channel Array - 40V 78A 4.7mΩ@10V 2.2V
onsemi 📄 PDF
SQJQ906EL-T1_GE3 N-Channel Array - 40V 160A - 2.5V
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FS70UMJ-06F-REN N-Channel Array - 60V 70A 7mΩ@10V 2V
RENESAS 📄 PDF