SIZF360DT-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Logic-Level
VISHAY
Vds Max
30V
Id Max
143A
Rds(on)
7.5mΩ@4.5V
Vgs(th)
2.2V
Quick Reference
The SIZF360DT-T1-GE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 143A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 143A | Max current handling |
| Power Dissipation (Pd) | 12.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 7.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 19.4nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.15nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.55nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SIZF640DT-T1-GE3 | N-Channel Array | - | 40V | 159A | 2.4mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| SQJQ906EL-T1_GE3 | N-Channel Array | - | 40V | 160A | - | 2.5V | VISHAY 📄 PDF |