SIR826ADP MOSFET Datasheet & Specifications

N-Channel PDFN-8L(5x6) High-Current TECH PUBLIC
Vds Max
85V
Id Max
85A
Rds(on)
5mΩ@10V
Vgs(th)
4V

Quick Reference

The SIR826ADP is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 85V and a continuous drain current of 85A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)85VMax breakdown voltage
Continuous Drain Current (Id)85AMax current handling
Power Dissipation (Pd)83WMax thermal limit
On-Resistance (Rds(on))5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)51nC@10VSwitching energy
Input Capacitance (Ciss)4.194nFInternal gate capacitance
Output Capacitance (Coss)665pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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