XRS130N10HF MOSFET Datasheet & Specifications

N-Channel PDFN-8L(5x6) High-Current XNRUSEMI
Vds Max
100V
Id Max
130A
Rds(on)
4.5mΩ@10V
Vgs(th)
4V

Quick Reference

The XRS130N10HF is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 130A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)130AMax current handling
Power Dissipation (Pd)131.6WMax thermal limit
On-Resistance (Rds(on))4.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)6.865nFInternal gate capacitance
Output Capacitance (Coss)740pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSC030N08NS5(ES) N-Channel PDFN-8L(5x6) 100V 138A 3mΩ@10V 2.7V
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