SI4850EY-T1-GE3 MOSFET Datasheet & Specifications
N-Channel
SO-8
Logic-Level
VISHAY
Vds Max
60V
Id Max
6A
Rds(on)
22mΩ@10V
Vgs(th)
3V
Quick Reference
The SI4850EY-T1-GE3 is an N-Channel MOSFET in a SO-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 1.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 22mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 27nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FDS5670-NL-VB | N-Channel | SO-8 | 60V | 12A | 12mΩ@10V 15mΩ@4.5V |
3V | VBsemi Elec 📄 PDF |
| STS7NF60L-VB | N-Channel | SO-8 | 60V | 12A | 12mΩ@10V 15mΩ@4.5V |
3V | VBsemi Elec 📄 PDF |
| SQ4470EY-T1_GE3 | N-Channel | SO-8 | 60V | 16A | 14mΩ@6V | 3.5V | VISHAY 📄 PDF |
| SI4850DY-T1-E3-VB | N-Channel | SO-8 | 60V | 7.6A | 25mΩ@10V 35mΩ@4.5V |
2.5V | VBsemi Elec 📄 PDF |
| VBZA9945 | N-Channel | SO-8 | 60V | 8A | 27mΩ@10V | 2.5V | VBsemi Elec 📄 PDF |
| SI9945BDY-T1-E3-VB | N-Channel | SO-8 | 60V | 7A | 28mΩ@10V | 2V | VBsemi Elec 📄 PDF |
| SI4946BEY-T1-E3-VB | N-Channel | SO-8 | 60V | 7A | 28mΩ@10V 30mΩ@4.5V |
2V | VBsemi Elec 📄 PDF |
| FDS9945-NL-VB | N-Channel | SO-8 | 60V | 7A | 28mΩ@10V | 2V | VBsemi Elec 📄 PDF |
| IRF7103TRPBF-VB | N-Channel | SO-8 | 60V | 7A | 28mΩ@10V 30mΩ@4.5V |
2V | VBsemi Elec 📄 PDF |
| SI4850EY-T1-E3 | N-Channel | SO-8 | 60V | 8.5A | 31mΩ@4.5V | 3V | VISHAY 📄 PDF |
| FDS5351 | N-Channel | SO-8 | 60V | 6.1A | 35mΩ@10V | 3V | onsemi 📄 PDF |
| DMT10H015LSS-13 | N-Channel | SO-8 | 100V | 8.3A | 12mΩ@10V | 2.3V | DIODES 📄 PDF |
| SI4058DY-T1-GE3 | N-Channel | SO-8 | 100V | 10.3A | 26mΩ@10V | 2.8V | VISHAY 📄 PDF |
| FDS3672-NL-VB | N-Channel | SO-8 | 100V | 9A | 32mΩ@10V | 1V | VBsemi Elec 📄 PDF |
| IRF7473TRPBF-VB | N-Channel | SO-8 | 100V | 9A | 32mΩ@10V | 1V | VBsemi Elec 📄 PDF |