IRF7103TRPBF-VB MOSFET Datasheet & Specifications

N-Channel SO-8 Logic-Level VBsemi Elec
Vds Max
60V
Id Max
7A
Rds(on)
28mΩ@10V;30mΩ@4.5V
Vgs(th)
2V

Quick Reference

The IRF7103TRPBF-VB is an N-Channel MOSFET in a SO-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVBsemi ElecOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)7AMax current handling
Power Dissipation (Pd)4WMax thermal limit
On-Resistance (Rds(on))28mΩ@10V;30mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)11.7nC@10VSwitching energy
Input Capacitance (Ciss)600pFInternal gate capacitance
Output Capacitance (Coss)110pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI4850DY-T1-E3-VB N-Channel SO-8 60V 7.6A 25mΩ@10V
35mΩ@4.5V
2.5V
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VBZA9945 N-Channel SO-8 60V 8A 27mΩ@10V 2.5V
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SI9945BDY-T1-E3-VB N-Channel SO-8 60V 7A 28mΩ@10V 2V
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SI4946BEY-T1-E3-VB N-Channel SO-8 60V 7A 28mΩ@10V
30mΩ@4.5V
2V
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FDS9945-NL-VB N-Channel SO-8 60V 7A 28mΩ@10V 2V
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DMT10H015LSS-13 N-Channel SO-8 100V 8.3A 12mΩ@10V 2.3V
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FDS3672-NL-VB N-Channel SO-8 100V 9A 32mΩ@10V 1V
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IRF7473TRPBF-VB N-Channel SO-8 100V 9A 32mΩ@10V 1V
VBsemi Elec 📄 PDF