SI4435DDY-T1-E3 MOSFET Datasheet & Specifications

P-Channel SO-8 Logic-Level VISHAY
Vds Max
30V
Id Max
11.4A
Rds(on)
35mΩ@4.5V
Vgs(th)
3V
📄 View PDF Datasheet 🛒 Buy from LCSC

Quick Reference

The SI4435DDY-T1-E3 is an P-Channel MOSFET in a SO-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 11.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)11.4AMax current handling
Power Dissipation (Pd)20WMax thermal limit
On-Resistance (Rds(on))35mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)15nCSwitching energy
Input Capacitance (Ciss)1.35nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI4497DY-T1-GE3 P-Channel SO-8 30V 36A 4.6mΩ@4.5V 2.5V
VISHAY 📄 PDF
SI7149ADP-T1-GE3 P-Channel SO-8 30V 23.1A 5.2mΩ@10V 1.2V
VISHAY 📄 PDF
FDS6681Z P-Channel SO-8 30V 20A 6.5mΩ@4.5V 1.8V
onsemi 📄 PDF
SI4459ADY-T1-GE3 P-Channel SO-8 30V 29A 7.75mΩ@4.5V 2.5V
VISHAY 📄 PDF
IRF9328TRPBF-VB P-Channel SO-8 30V 11.6A 11mΩ@10V
12mΩ@4.5V		 3V
VBsemi Elec 📄 PDF
SI4405DY-T1-GE3-VB P-Channel SO-8 30V 13.5A 11mΩ@10V
15mΩ@4.5V		 2.5V
VBsemi Elec 📄 PDF
AO4447A-VB P-Channel SO-8 30V 13.5A 11mΩ@10V
15mΩ@4.5V		 1.4V
VBsemi Elec 📄 PDF
SI4825DDY-T1-GE3 P-Channel SO-8 30V 14.9A 20.5mΩ@4.5V 2.5V
VISHAY 📄 PDF
SI4835DDY-T1-GE3 P-Channel SO-8 30V 13A 30mΩ@4.5V 3V
VISHAY 📄 PDF
SI4435DDY-T1-GE3 P-Channel SO-8 30V 11.4A 35mΩ@4.5V 3V
VISHAY 📄 PDF
Logic-Level P-Channel