SI4405DY-T1-GE3-VB MOSFET Datasheet & Specifications
P-Channel
SO-8
Logic-Level
VBsemi Elec
Vds Max
30V
Id Max
13.5A
Rds(on)
11mΩ@10V;15mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SI4405DY-T1-GE3-VB is an P-Channel MOSFET in a SO-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 13.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13.5A | Max current handling |
| Power Dissipation (Pd) | 5W | Max thermal limit |
| On-Resistance (Rds(on)) | 11mΩ@10V;15mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 57nC@10V;29.5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 2.55nF | Internal gate capacitance |
| Output Capacitance (Coss) | 455pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI4497DY-T1-GE3 | P-Channel | SO-8 | 30V | 36A | 4.6mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| SI7149ADP-T1-GE3 | P-Channel | SO-8 | 30V | 23.1A | 5.2mΩ@10V | 1.2V | VISHAY 📄 PDF |
| FDS6681Z | P-Channel | SO-8 | 30V | 20A | 6.5mΩ@4.5V | 1.8V | onsemi 📄 PDF |
| SI4459ADY-T1-GE3 | P-Channel | SO-8 | 30V | 29A | 7.75mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| AO4447A-VB | P-Channel | SO-8 | 30V | 13.5A | 11mΩ@10V 15mΩ@4.5V |
1.4V | VBsemi Elec 📄 PDF |
| SI4825DDY-T1-GE3 | P-Channel | SO-8 | 30V | 14.9A | 20.5mΩ@4.5V | 2.5V | VISHAY 📄 PDF |