SI1016X-T1-GE3 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SOT-563 Logic-Level VISHAY
Vds Max
20V
Id Max
600mA
Rds(on)
2.7Ī©@1.8V
Vgs(th)
1V

Quick Reference

The SI1016X-T1-GE3 is a Dual N/P-Channel in a SOT-563 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 600mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-563Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)600mAMax current handling
Power Dissipation (Pd)280mWMax thermal limit
On-Resistance (Rds(on))2.7Ī©@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)750pC;1.5nCSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC2710UV-13 Dual N/P-Channel SOT-563 20V 1.1A 400mΩ@4.5V
700mΩ@4.5V
1V
DMC2710UVQ-13 Dual N/P-Channel SOT-563 20V 1.1A 400mΩ@4.5V 1V
DMC2450UV-13 Dual N/P-Channel SOT-563 20V 1.03A 480mΩ@5V 1V
DMC2710UVQ-7 Dual N/P-Channel SOT-563 20V 1.1A 700mΩ@4.5V 1V
DMG1016V-7 Dual N/P-Channel SOT-563 20V 870mA 900mΩ@4.5V 1V
DMC2450UV-7 Dual N/P-Channel SOT-563 20V 1.03A 900mΩ@1.8V 900mV
SIX3439KA-TP Dual N/P-Channel SOT-563 20V 750mA 2Ī©@1.8V 1.1V
DMN32D0LV-13 Dual N/P-Channel SOT-563 30V 680mA 1.5Ī©@2.5V 1.2V
DMN32D0LV-7 Dual N/P-Channel SOT-563 30V 680mA 2.2Ī©@1.8V 1.2V