DMC2710UVQ-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-563
Logic-Level
DIODES
Vds Max
20V
Id Max
1.1A
Rds(on)
400mΩ@4.5V
Vgs(th)
1V
Quick Reference
The DMC2710UVQ-13 is a Dual N/P-Channel in a SOT-563 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 1.1A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.1A | Max current handling |
| Power Dissipation (Pd) | 800mW | Max thermal limit |
| On-Resistance (Rds(on)) | 400mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 700pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 49pF | Internal gate capacitance |
| Output Capacitance (Coss) | 13pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMC2710UV-13 | Dual N/P-Channel | SOT-563 | 20V | 1.1A | 400mΩ@4.5V 700mΩ@4.5V |
1V | DIODES 📄 PDF |
| DMC2710UVQ-7 | Dual N/P-Channel | SOT-563 | 20V | 1.1A | 700mΩ@4.5V | 1V | DIODES 📄 PDF |