PTN30P03 MOSFET Datasheet & Specifications

P-Channel PDFN-8L(3x3) Logic-Level HT(Shenzhen Jinyu Semicon)
Vds Max
30V
Id Max
30A
Rds(on)
9mΩ@10V;13mΩ@4.5V
Vgs(th)
2.2V

Quick Reference

The PTN30P03 is an P-Channel MOSFET in a PDFN-8L(3x3) package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackagePDFN-8L(3x3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)32WMax thermal limit
On-Resistance (Rds(on))9mΩ@10V;13mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)81nC@10VSwitching energy
Input Capacitance (Ciss)2.78nFInternal gate capacitance
Output Capacitance (Coss)324pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP3013SFV-7(ES) P-Channel PDFN-8L(3x3) 30V 39A 8mΩ@10V
11.5mΩ@4.5V
1.4V
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SI7617DN(ES) P-Channel PDFN-8L(3x3) 30V 39A 8mΩ@10V
11.5mΩ@4.5V
1.4V
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YFW50P03DF P-Channel PDFN-8L(3x3) 30V 50A 12.5mΩ@4.5V 2.5V
ESD30L40DN-ES P-Channel PDFN-8L(3x3) 30V 31A 13mΩ@10V
17mΩ@4.5V
1.5V
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SP40P08ANJ P-Channel PDFN-8L(3x3) 40V 36A 8mΩ@10V
11mΩ@4.5V
1.6V
Siliup 📄 PDF