ESD30L40DN-ES MOSFET Datasheet & Specifications

P-Channel PDFN-8L(3x3) Logic-Level ElecSuper
Vds Max
30V
Id Max
31A
Rds(on)
13mΩ@10V;17mΩ@4.5V
Vgs(th)
1.5V

Quick Reference

The ESD30L40DN-ES is an P-Channel MOSFET in a PDFN-8L(3x3) package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 31A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerElecSuperOriginal Manufacturer
PackagePDFN-8L(3x3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)31AMax current handling
Power Dissipation (Pd)30WMax thermal limit
On-Resistance (Rds(on))13mΩ@10V;17mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)26.4nC@10VSwitching energy
Input Capacitance (Ciss)1.23nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP3013SFV-7(ES) P-Channel PDFN-8L(3x3) 30V 39A 8mΩ@10V
11.5mΩ@4.5V
1.4V
ElecSuper 📄 PDF
SI7617DN(ES) P-Channel PDFN-8L(3x3) 30V 39A 8mΩ@10V
11.5mΩ@4.5V
1.4V
ElecSuper 📄 PDF
SP40P08ANJ P-Channel PDFN-8L(3x3) 40V 36A 8mΩ@10V
11mΩ@4.5V
1.6V
Siliup 📄 PDF