PMBT3946YPN-HXY Datasheet & Equivalents

NPN+PNP SOT-363 General Purpose HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The PMBT3946YPN-HXY is a NPN+PNP bipolar junction transistor array in a SOT-363 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 40V and continuous collector current of 200mA per channel.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
PolarityNPN+PNPConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)850mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MBT3946DW1T1G-HXY NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT4146-7-F-HXY NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MDD(Microdiod... ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 300 200mW
MMDT3946DW NPN+PNP SOT-363 40V 200mA 300 200mW
GOODWORK ๐Ÿ“„ PDF
MMDT3946 NPN+PNP SOT-363 40V 200mA 200 200mW
HMMDT39467F NPN+PNP SOT-363 40V 200mA 100 200mW
HXY MOSFET ๐Ÿ“„ PDF
LMBT3946DW1T1G NPN+PNP SOT-363 40V 200mA 100 150mW
MMDT3946DW NPN+PNP SOT-363 40V 200mA 100 200mW
MMDT3946 NPN+PNP SOT-363 40V 200mA 40 200mW
TECH PUBLIC ๐Ÿ“„ PDF